John Twynam
34Patents
6h-index
24Co-inventors
69Inventor score
Filing activity: Jul 18, 1991 → Jan 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7538364B2 | Compound semiconductor FET | Electricity | 99 | Expired |
| US5508536A | Heterojunction bipolar transistor having low electron and hole concentrations in the emitter-base junction region | Electricity | 23 | Expired |
| US6611008B2 | Heterojunction bipolar transistor capable of restraining the conductivity modulation of the ballast layer | Electricity | 13 | Expired |
| US6399969B1 | Heterojunction bipolar transistor including collector/base heterojunction achieving high operation efficiency | Electricity | 11 | Expired |
| US6133592A | Compound semiconductor device and method for producing the same | Electricity | 9 | Expired |
| US5719415A | Hetero-junction bipolar transistor | Electricity | 9 | Expired |
| US7629632B2 | Insulated-gate field effect transistor | Electricity | 5 | Active |
| US8258544B2 | Field-effect transistor | Electricity | 4 | Active |
| US5216538A | Electric-signal amplifying device using light transmission | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8017977B2 | Field effect transistor having recessed gate in compositional graded layer | Electricity | 4 | Active |
| US8766275B2 | Composite semiconductor device | Electricity | 4 | Active |
| US8288796B2 | Semiconductor device | Electricity | 4 | Active |
| US7759760B2 | Semiconductor switching element and semiconductor circuit apparatus | Electricity | 4 | Active |
| US5721437A | Heterojunction-type bipolar transistor with ballast resistance layer | Electricity | 4 | Expired |
| US7893461B2 | Electronic device and heterojunction FET | Electricity | 3 | Active |
| US7733105B2 | Voltage clamp circuit and semiconductor device, overcurrent protection circuit, voltage measurement probe, voltage measurement device and semiconductor evaluation device respectively using the same | Physics | 3 | Active |
| US6037663A | Ohmic electrode structure for In.sub.x Ga.sub.1-x As layer | Electricity | 2 | Expired |
| US9825026B2 | Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics | Electricity | 2 | Active |
| US6111265A | Gunn diode having a graded aluminum gallium arsenide active layer and Gunn diode oscillator | Electricity | 1 | Expired |
| US10403723B2 | Semiconductor device and semiconductor circuit including the device | Electricity | 1 | Active |
| US7566917B2 | Electronic device and heterojunction FET | Electricity | 1 | Expired |
| US8004022B2 | Field effect transistor | Electricity | 1 | Active |
| US9269801B2 | Normally-off-type heterojunction field-effect transistor | Electricity | 1 | Active |
| US6566694B2 | Heterojunction bipolar transferred electron tetrode | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11342451B2 | Semiconductor device and method of fabricating a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.