Manufacturing method of oxide semiconductor device
US10403743B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jul 20, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Jan 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of an oxide semiconductor device includes the following steps. A first oxide semiconductor layer is formed on a substrate. A gate insulation layer is formed on the first oxide semiconductor layer. A first flattening process is performed on a top surface of the first oxide semiconductor layer before the step of forming the gate insulation layer. A roughness of the top surface of the first oxide semiconductor layer after the first flattening process is smaller than the roughness of the top surface of the first oxide semiconductor layer before the first flattening process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.