Optoelectronic device comprising three-dimensional semiconductor structures in an axial configuration
US10403787B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 28, 2016 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Nov 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3) on which same lies, and comprising: a first doped portion (10), extending from one surface of the substrate (3) along the longitudinal axis (Δ); an active portion (30) comprising a passivation layer (34) and at least one quantum well (32) covered laterally by said passivation layer (34), the quantum well (32) of the active portion (30) having a mean diameter greater than that of said first doped portion (10), said active portion (30) extending from the first doped portion (10) along the longitudinal axis (Δ); and a second doped portion (20), extending from the active portion (30) along the longitudinal axis (Δ). The invention is characterized in that the device comprises a plurality of three-dimensional semiconductor structures (2) extending substantially in parallel with one another, the active portions (30) of which are in mutual contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.