Semiconductor device

US10403794B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Yu Wang · Sunnyvale, US
• Dian-Ying HU · Hsinchu, TW

Key dates

• Filing date: Mar 28, 2018
• Grant date: Sep 3, 2019
• Expiry date: Mar 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/811

Abstract

The semiconductor device includes a first conductivity-type semiconductor structure comprising a first stack and a second stack, wherein the first stack comprises alternate first layers and second layers, the second stack comprises alternate third layers and fourth layers. The semiconductor device includes a second conductivity-type semiconductor structure on the first conductivity-type semiconductor and includes an active structure between the first conductivity-type semiconductor structure and the second conductivity-type semiconductor structure. The first stack is between the active structure and the second stack, and a first difference between a maximum of the first doping concentration of one of the first layers and a minimum of the second doping concentration of one of the second layers is less than a second difference between a maximum of the third doping concentration of one of the third layers and a minimum of the fourth doping concentration of one of the fourth layers.