Power device with integrated gate driver
US10404251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | May 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The technology described herein is generally directed towards a self-bootstrap integrated gate driver circuit with high driving speed, enhanced driving capability and rail-to-rail output. A capacitor and diode are used with a first inverter coupled to a control signal input terminal, a second inverter coupled to the first inverter, a push-pull circuit comprising a pull-up transistor and a pull-down transistor and a power device comprising a power device transistor with a gate. Control signal input at one state controls the first inverter to a first output state, turns on the pull-down transistor to discharge the gate of the power device transistor, turns off the power device and charges the capacitor through the diode. The control signal input in another state controls the first inverter to a second output state, turns off the pull-down transistor and turns on the pull-up transistor via the capacitor to turn on the power device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.