Method for depositing a layer using a magnetron sputtering device

US10407767B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Hagen Bartzsch · Dresden, DE
• Peter Frach · Radeberg, DE
• Jan Hildisch · Dresden, DE

Key dates

• Filing date: Sep 6, 2017
• Grant date: Sep 10, 2019
• Expiry date: Nov 24, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/3467
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.