Alternating hardmasks for tight-pitch line formation
US10410875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Nov 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern has hardmask fins of three mutually selectively etchable compositions. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.