Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications

US10410878B2 · kind B2 · utility

Assignees

• American Air Liquide, Inc. · US
• Air Liquide Electronics U.S. LP · US
• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Hui SUN · Hangzhou City, CN
• Fabrizio Marchegiani · Wilmington, US
• James Royer · San Diego, US
• Nathan Stafford · Happy Valley, US
• Rahul Gupta · Santa Clara, US

Key dates

• Filing date: Oct 31, 2017
• Grant date: Sep 10, 2019
• Expiry date: Oct 31, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.