Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium doping
US10410918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Jan 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.