Image sensor
US10411054B2 · kind B2 · utility
2Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Dec 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.