Thin film formation method and thin film formation apparatus
US10415135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2011 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Sep 17, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/28
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.