Growth of a shaped silicon ingot by feeding liquid onto a shaped ingot
US10415149B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Mar 13, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/64
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system comprises a silicon seed arranged on a pedestal, where the silicon seed is ring shaped and is configured to receive melted silicon at a feed rate to form an ingot, and where the pedestal is configured to rotate at a rotational speed. A controller is configured to, while the silicon seed receives the melted silicon and while the ingot is forming: receive feedback regarding a diameter of the ingot and regarding an angle of a meniscus of the ingot, and control the rotational speed of the pedestal and the feed rate of the melted silicon based on the feedback to control the diameter of the ingot and the angle of the meniscus of the ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.