Patent · US Active

Doped rare earth nitride materials and devices comprising same

US10415153B2 · kind B2 · utility

0Cited by

29References

20Claims

0Family size

Inventors

Franck Natali · Porirua, NZ
Benjamin John Ruck
Harry Joseph Trodahl · Upper Moutere, NZ
Stéphane Vezian · Valbonne, FR

Key dates

Filing date	Mar 31, 2015
Grant date	Sep 17, 2019
Priority date	—
Expiry date	Sep 1, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/80
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.