X-ray diffraction device and method to measure stress with 2D detector and single sample tilt
US10416102B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Jun 23, 2017 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Mar 22, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/61
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is provided for performing an X-ray diffraction stress analysis of a sample such as a thin film, a coating, or a polymer. The sample has a surface with two perpendicular axes S1, S2 within a plane of the surface, and a third axis S3 perpendicular to the sample surface plane. An X-ray beam is directed at the sample surface at a relatively low angle with regard to the surface plane. X-ray energy is diffracted from the sample and detected with a two-dimensional X-ray detector at a plurality of rotational orientations of the sample about S3. The third axis S3 is maintained at a constant tilt angle during the entire X-ray diffraction stress analysis, thereby avoiding the significant error associated to the movement of a cradle track of a goniometer used for the X-ray diffraction stress analysis and on which measurements at a low 2θ angle are highly sensitive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.