Optoelectronic semiconductor chip and method for fabrication thereof

US10418355B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Rainer Butendeich · Regensburg, DE
• Alexander Walter · Hemau, DE
• Matthias Peter · Orpund, CH
• Tobias Meyer · Durham, US
• Tetsuya Taki · Miyoshi, JP
• Hubert Maiwald · Neutraubling, DE

Key dates

• Filing date: Aug 8, 2017
• Grant date: Sep 17, 2019
• Expiry date: Aug 8, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/821

Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.