Method of ONO stack formation
US10418373B2 · kind B2 · utility
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14References
19Claims
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Key dates
| Filing date | Nov 13, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of controlling the thickness of gate oxides in an integrated CMOS process which includes performing a two-step gate oxidation process to concurrently oxidize and therefore consume at least a first portion of the cap layer of the NV gate stack to form a blocking oxide and form a gate oxide of at least one metal-oxide-semiconductor (MOS) transistor in the second region, wherein the gate oxide of the at least one MOS transistor is formed during both a first oxidation step and a second oxidation step of the gate oxidation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.