Patent assignee · IE · COMPANY

LONGITUDE FLASH MEMORY SOLUTIONS LTD.

39Patents
38Active
39Granted
49Portfolio score

Filing activity: Aug 11, 2015 → Feb 13, 2023

Most-cited patents

PatentTitleAreaCited byStatus
US10593812B2 Radical oxidation process for fabricating a nonvolatile charge trap memory device Electricity 6 Active
US10700083B1 Method of ONO integration into logic CMOS flow Electricity 5 Active
US10374067B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 3 Active
US10332599B2 Bias scheme for word programming in non-volatile memory and inhibit disturb reduction Electricity 2 Active
US10896973B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 1 Active
US10790364B2 SONOS stack with split nitride memory layer Electricity 1 Active
US10706937B2 Asymmetric pass field-effect transistor for non-volatile memory Physics 1 Active
US11251189B2 Gate fringing effect based channel formation for semiconductor device Electricity 0 Active
US11361826B2 Asymmetric pass field-effect transistor for nonvolatile memory Physics 0 Active
US10903342B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 0 Active
US10699901B2 SONOS ONO stack scaling Electricity 0 Active
US10998019B2 Low standby power with fast turn on method for non-volatile memory devices Physics 0 Active
US11581029B2 Low standby power with fast turn on method for non-volatile memory devices Physics 0 Active
US10424592B2 Method of integrating a charge-trapping gate stack into a CMOS flow Electricity 0 Active
US11456365B2 Memory transistor with multiple charge storing layers and a high work function gate electrode Electricity 0 Active
US10510387B2 Low standby power with fast turn on method for non-volatile memory devices Physics 0 Active
US10418110B2 Asymmetric pass field-effect transistor for nonvolatile memory Physics 0 Active
US10784277B2 Integration of a memory transistor into High-k, metal gate CMOS process flow Electricity 0 Active
US10373688B2 High voltage architecture for non-volatile memory Electricity 0 Active
US10615289B2 Nonvolatile charge trap memory device having a high dielectric constant blocking region Electricity 0 Active
US11257912B2 Sonos stack with split nitride memory layer Electricity 0 Active
US10446656B2 Memory transistor with multiple charge storing layers and a high work function gate electrode Electricity 0 Active
US10418373B2 Method of ONO stack formation Electricity 0 Active
US10784356B2 Embedded sonos with triple gate oxide and manufacturing method of the same Electricity 0 Active
US12266521B2 Oxide-nitride-oxide stack having multiple oxynitride layers Electricity 0 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.