Patent · US Active

Trench gate MOSFET

US10418442B1 · kind B1 · utility

1Cited by
7References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 20, 2018
Grant dateSep 17, 2019
Priority date—
Expiry dateJul 20, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/143
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a trench gate MOSFET including a substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a first conductive layer of a second conductivity type, a second conductive layer and an interlayer insulating layer. The epitaxial layer is disposed on the substrate and has at least one trench therein. The first conductive layer is disposed in the lower portion of the trench and in physical contact with the epitaxial layer. The second conductive layer is disposed in the upper portion of the trench. The interlayer insulating layer is disposed between the first conductive layer and the second conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.