Diamond based current aperture vertical transistor and methods of making and using the same

US10418475B2 · kind B2 · utility

Assignees

• ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US
• The Regents of the University of California · US

Inventors

• Srabanti Chowdhury · Goleta, US
• Maitreya Dutta · Hillsboro, US
• Robert J. Nemanich · Cary, US
• Franz A. Koeck · Kulm am Zirbitz, AT

Key dates

• Filing date: Nov 28, 2017
• Grant date: Sep 17, 2019
• Expiry date: Nov 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.