Silicon carbide semiconductor device
US10418476B2 · kind B2 · utility
3Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2017 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Sep 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
The present invention is related to a silicon carbide semiconductor device which employs a silicon carbide substrate to form an integrated device. The integrated device of the present invention comprises a metal oxide semiconductor field-effect transistor (MOSFET) and an integrated junction barrier Schottky (JBS) diode in an anti-parallel connection with the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.