Chwan-Ying Lee
37Patents
12h-index
15Co-inventors
78Inventor score
Filing activity: Jan 5, 1995 → Aug 31, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6436816B1 | Method of electroless plating copper on nitride barrier | Electricity | 297 | Expired |
| US6180523A | Copper metallization of USLI by electroless process | Electricity | 271 | Expired |
| US6030877A | Electroless gold plating method for forming inductor structures | Electricity | 116 | Expired |
| US5583073A | Method for producing electroless barrier layer and solder bump on chip | Electricity | 104 | Expired |
| US5776813A | Process to manufacture a vertical gate-enhanced bipolar transistor | Electricity | 77 | Expired |
| US5801100A | Electroless copper plating method for forming integrated circuit structures | Emerging Cross-Sectional Technologies | 57 | Expired |
| US5917244A | Integrated circuit inductor structure formed employing copper containing conductor winding layer clad with nickel containing conductor layer | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5795619A | Solder bump fabricated method incorporate with electroless deposit and dip solder | Chemistry; Metallurgy | 21 | Expired |
| US6333235A | Method for forming SiGe bipolar transistor | Electricity | 21 | Expired |
| US6180478A | Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance | Electricity | 18 | Expired |
| US6406743B1 | Nickel-silicide formation by electroless Ni deposition on polysilicon | Electricity | 17 | Expired |
| US8766279B1 | SiC-based trench-type schottky device | Electricity | 12 | Active |
| US9368650B1 | SiC junction barrier controlled schottky rectifier | Electricity | 8 | Active |
| US6589849B1 | Method for fabricating epitaxy base bipolar transistor | Electricity | 8 | Expired |
| US6713377B2 | Method of electroless plating copper on nitride barrier | Electricity | 8 | Expired |
| US9246016B1 | Silicon carbide semiconductor device | Electricity | 7 | Active |
| US8841721B2 | Stepped trench MOSFET and method of fabricating the same | Electricity | 6 | Active |
| US6228733A | Non-selective epitaxial depostion technology | Electricity | 4 | Expired |
| US6660625B2 | Method of electroless plating copper on nitride barrier | Electricity | 4 | Expired |
| US9209293B2 | Integrated device having MOSFET cell array embedded with barrier Schottky diode | Electricity | 3 | Active |
| US10483389B2 | Silicon carbide semiconductor device | Electricity | 3 | Active |
| US6046107A | Electroless copper employing hypophosphite as a reducing agent | Chemistry; Metallurgy | 3 | Expired |
| US10418476B2 | Silicon carbide semiconductor device | Electricity | 3 | Active |
| US10020368B2 | Silicon carbide semiconductor element and manufacturing method thereof | Electricity | 2 | Active |
| US9018640B1 | Silicon carbide power device equipped with termination structure | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.