Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
US10418499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2017 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Jun 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.