LED sidewall processing to mitigate non-radiative recombination

US10418519B2 · kind B2 · utility

Assignee

• Apple Inc. · US

Inventors

• David P. Bour · Cupertino, US
• Dmitry S. Sizov · Cupertino, US
• Daniel Arthur Haeger · Fremont, US
• Xiaobin Xin · Santa Clara, US

Key dates

• Filing date: Dec 14, 2016
• Grant date: Sep 17, 2019
• Expiry date: Dec 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/142

Abstract

LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.