Electron beam pumped non-c-plane UV emitters
US10418785B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Nov 19, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Nov 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.