Thomas Wunderer
37Patents
6h-index
31Co-inventors
65Inventor score
Filing activity: Dec 21, 2006 → Apr 16, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7727332B2 | Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby | Electricity | 258 | Active |
| US9401452B2 | P-side layers for short wavelength light emitters | Electricity | 30 | Active |
| US9444224B2 | Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer | Electricity | 21 | Active |
| US9252329B2 | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction | Electricity | 21 | Active |
| US8964796B2 | Structure for electron-beam pumped edge-emitting device and methods for producing same | Electricity | 8 | Active |
| US9335262B2 | Gap distributed Bragg reflectors | Electricity | 7 | Active |
| US9112331B2 | Surface emitting laser incorporating third reflector | Electricity | 6 | Active |
| US9112332B2 | Electron beam pumped vertical cavity surface emitting laser | Electricity | 5 | Active |
| US9219189B2 | Graded electron blocking layer | Electricity | 4 | Active |
| US9124062B2 | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector | Electricity | 3 | Active |
| US8536030B2 | Semipolar semiconductor crystal and method for manufacturing the same | Chemistry; Metallurgy | 2 | Active |
| US9780532B1 | Vertical external cavity surface emitting laser utilizing an external micromirror array | Electricity | 2 | Active |
| US10249786B2 | Thin film and substrate-removed group III-nitride based devices and method | Electricity | 1 | Active |
| US9490119B2 | Fabrication of thin-film devices using selective area epitaxy | Electricity | 1 | Active |
| US9705288B2 | Electron beam pumped vertical cavity surface emitting laser | Electricity | 1 | Active |
| US8908161B2 | Removing aluminum nitride sections | Electricity | 1 | Active |
| US9660134B1 | Nitride semiconductor polarization controlled device | Electricity | 1 | Active |
| US11988868B2 | Forming optical components using selective area epitaxy | Electricity | 1 | Active |
| US10418785B2 | Electron beam pumped non-c-plane UV emitters | Electricity | 0 | Active |
| US9905727B2 | Fabrication of thin-film devices using selective area epitaxy | Electricity | 0 | Active |
| US9859468B2 | Small-sized light-emitting diode chiplets and method of fabrication thereof | Electricity | 0 | Active |
| US11848371B2 | Polarization controlled transistor | Electricity | 0 | Active |
| US10164146B2 | P-side layers for short wavelength light emitters | Electricity | 0 | Active |
| US11912013B2 | Charged particle generation, filtration, and delivery for digital offset printing applications | Physics | 0 | Active |
| US11780218B2 | Matrix-addressed heat image forming device | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.