High-Chi block copolymers for directed self-assembly
US10421878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2015 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Feb 9, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/3154
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (χ). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.