Apparatuses and methods for sensing memory cells
US10424372B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Apr 19, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Sensing memory cells can include: applying a voltage ramp to a group of memory cells to sense their respective states; sensing when a first switching event occurs to one of the memory cells responsive to the applied voltage ramp; stopping application of the voltage ramp after a particular amount of time subsequent to when the first switching event occurs; and determining which additional memory cells of the group experience the switching event during the particular amount of time. Those cells determined to have experienced the switching event responsive to the applied voltage ramp are sensed as storing a first data value and those cells determined to not have experienced the switching event responsive to the applied voltage ramp are sensed as storing a second data value. The group stores data according to an encoding function constrained such that each code pattern includes at least one data unit having the first data value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.