Method for producing a semiconductor body
US10424509B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2016 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Feb 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.