Franz Eberhard
28Patents
5h-index
51Co-inventors
72Inventor score
Filing activity: Feb 9, 2004 → Mar 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7885302B2 | Integrated tapered diode laser arrangement and method for producing it | Electricity | 32 | Active |
| US7462878B2 | Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer | Electricity | 19 | Active |
| US7227191B2 | Optoelectronic component having a plurality of current expansion layers and method for producing it | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7164158B2 | Electrical contact for optoelectronic semiconductor chip and method for its production | Electricity | 11 | Expired |
| US7742677B2 | Method for producing an optoelectronic component | Emerging Cross-Sectional Technologies | 8 | Active |
| US7408972B2 | Optically pumped semiconductor laser device | Electricity | 5 | Expired |
| US8581279B2 | Light-emitting diode chip comprising a contact structure | Electricity | 4 | Active |
| US11164994B2 | Radiation-emitting semiconductor chip | Electricity | 4 | Active |
| US8354682B2 | Radiation emitting element | Electricity | 3 | Active |
| US8896019B2 | Thin-film encapsulation, optoelectronic semiconductor body comprising a thin-film encapsulation and method for producing a thin-film encapsulation | Electricity | 2 | Active |
| US8723199B2 | Radiation emitting body and method for producing a radiation-emitting body | Electricity | 2 | Active |
| US9012940B2 | Optoelectronic semiconductor bodies having a reflective layer system | Emerging Cross-Sectional Technologies | 1 | Active |
| US8829560B2 | Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip | Electricity | 1 | Active |
| US9324615B2 | Method for producing a semiconductor body | Electricity | 1 | Active |
| US11631783B2 | Radiation-emitting semiconductor chip | Electricity | 1 | Active |
| US11127880B2 | Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device | Electricity | 0 | Active |
| US7696078B2 | Method for producing an electrical contact for an optoelectronic semiconductor chip | Electricity | 0 | Active |
| US7260129B2 | Multipartite laser | Electricity | 0 | Expired |
| US10475965B2 | Optoelectronic semiconductor chip and method for manufacturing an optoelectronic semiconductor chip | Electricity | 0 | Active |
| US11705370B2 | Semiconductor component having a compressive strain layer and method for producing the semiconductor component having a compressive strain layer | Electricity | 0 | Active |
| US12080827B2 | Radiation-emitting semiconductor chip | Electricity | 0 | Active |
| US11990576B2 | Optoelectronic semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11367808B2 | Radiation-emitting semiconductor chip with overlapping contact layers | Electricity | 0 | Active |
| US10468555B2 | Method for producing a semiconductor body | Electricity | 0 | Active |
| US10424509B2 | Method for producing a semiconductor body | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.