Capacitor, image sensor circuit and fabrication methods thereof
US10424610B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 20, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Dec 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor, an image sensor circuit and fabricating methods are provided. The method includes providing a base substrate including a trench region and a body region adjacent to the trench region. The method also includes forming a first trench structure and a second trench structure on the first trench structure, in the base substrate in the trench region. In addition, the method includes forming a dielectric layer on a sidewall surface and a bottom surface of the first trench structure and an electrode layer on the dielectric layer in the first trench structure. Further, the method includes forming an isolation layer filling the second trench structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.