Film-forming method
US10428422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2017 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Dec 16, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film-forming method for forming a film in a film-forming apparatus includes generating first gas molecular species and second gas molecular species by causing the first source gas and the second source gas accumulated in the accumulation mechanisms to pass through respective instantaneously-heating units, sharply raising partial pressure of the first gas molecular species and partial pressure of the second gas molecular species by projectingly supplying the first gas molecular species and the second gas molecular species to the reaction chamber in which the substrate has been placed, which has been depressurized, and which has a constant capacity; bringing the first gas molecular species or the second gas molecular species into reaction by alternately repeatedly guiding the first gas molecular species or the second gas molecular species to a surface of the substrate, and forming a compound film on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.