Shinji Nishihara
42Patents
9h-index
44Co-inventors
75Inventor score
Filing activity: May 20, 1992 → Dec 27, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6656828B1 | Method of forming bump electrodes | Electricity | 61 | Expired |
| US5444012A | Method for manufacturing semiconductor integrated circuit device having a fuse element | Emerging Cross-Sectional Technologies | 57 | Expired |
| US5904556A | Method for making semiconductor integrated circuit device having interconnection structure using tungsten film | Electricity | 40 | Expired |
| US5188975A | Method of producing a connection hole for a DRAM having at least three conductor layers in a self alignment manner. | Electricity | 29 | Expired |
| US6031288A | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Electricity | 25 | Expired |
| US8237622B2 | Base sheet | Electricity | 19 | Active |
| US6780757B2 | Semiconductor integrated circuit device and method for making the same | Electricity | 12 | Expired |
| US8933784B2 | RF powder particle, RF powder, and RF powder-containing base | Electricity | 10 | Active |
| US8766853B2 | Method for adding RF powder and RF powder-added base sheet | Electricity | 10 | Active |
| US8724978B2 | Fluid heating-cooling cylinder device | Electricity | 9 | Active |
| US6693001B2 | Process for producing semiconductor integrated circuit device | Electricity | 8 | Expired |
| US6503803B2 | Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer | Electricity | 8 | Expired |
| US6472754B2 | Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector | Electricity | 7 | Expired |
| US8178415B2 | Method for manufacturing RF powder | Electricity | 5 | Active |
| US6326216A | Process for producing semiconductor integrated circuit device | Electricity | 5 | Expired |
| US6268658A | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Electricity | 4 | Expired |
| US7064437B2 | Semiconductor device having aluminum conductors | Electricity | 3 | Expired |
| US6548904B2 | Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum | Electricity | 2 | Expired |
| US6476492B2 | Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten | Electricity | 2 | Expired |
| US6583049B2 | Semiconductor integrated circuit device and method for making the same | Electricity | 2 | Expired |
| US6858484B2 | Method of fabricating semiconductor integrated circuit device | Electricity | 2 | Expired |
| US6300237A | Semiconductor integrated circuit device and method for making the same | Electricity | 2 | Expired |
| US6617691B2 | Semiconductor device | Electricity | 2 | Expired |
| US6856021B1 | Semiconductor device having aluminum alloy conductors | Electricity | 2 | Expired |
| US6545362B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.