Electrostatic hole trapping radiation detectors
US10429522B1 · kind B1 · utility
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14Claims
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Key dates
| Filing date | May 23, 2018 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | May 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/195
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A Defect Specific Lifetime Analysis (DSLA) can measure electrostatic hole trapping characteristics of semiconductors to identify crystals for use in radiation detectors. A semiconductor crystal with high electrostatic hole trapping can be employed in radiation detectors having simplified signal processing circuits and/or high radiation energy measurement resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.