Emil Kamieniecki
26Patents
11h-index
8Co-inventors
68Inventor score
Filing activity: Oct 21, 1982 → Jun 6, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4891584A | Apparatus for making surface photovoltage measurements of a semiconductor | Physics | 139 | Expired |
| US5661408A | Real-time in-line testing of semiconductor wafers | Electricity | 88 | Expired |
| US5091691A | Apparatus for making surface photovoltage measurements of a semiconductor | Physics | 82 | Expired |
| US4827212A | Noninvasive method and apparatus for characterization of semiconductors | Physics | 50 | Expired |
| US6388455B1 | Method and apparatus for simulating a surface photo-voltage in a substrate | Physics | 43 | Expired |
| US5087876A | Apparatus and method for making surface photovoltage measurements of a semiconductor | Physics | 30 | Expired |
| US4544887A | Method of measuring photo-induced voltage at the surface of semiconductor materials | Physics | 27 | Expired |
| US4663526A | Nondestructive readout of a latent electrostatic image formed on an insulating material | Physics | 27 | Expired |
| US6325078A | Apparatus and method for rapid photo-thermal surface treatment | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6069017A | Method for real-time in-line testing of semiconductor wafers | Electricity | 19 | Expired |
| US6315574A | Method for real-time in-line testing of semiconductor wafers | Electricity | 16 | Expired |
| US7898280B2 | Electrical characterization of semiconductor materials | Emerging Cross-Sectional Technologies | 10 | Active |
| US6803588B2 | Apparatus and method for rapid photo-thermal surfaces treatment | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4873436A | Nondestructive readout of a latent electrostatic image formed on an insulating material | Physics | 9 | Expired |
| US7663385B2 | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor | Physics | 5 | Expired |
| US8896338B2 | Electrical characterization of semiconductor materials | Physics | 5 | Active |
| US8232817B2 | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor | Physics | 4 | Active |
| US6909302B2 | Real-time in-line testing of semiconductor wafers | Electricity | 3 | Expired |
| US4847496A | Nondestructive readout of a latent electrostatic image formed on an insulated material | Physics | 2 | Expired |
| US4833324A | Nondestructive readout of a latent electrostatic image formed on an insulating material | Physics | 2 | Expired |
| US6924657B2 | Real-time in-line testing of semiconductor wafers | Electricity | 1 | Expired |
| US6967490B1 | Real-time in-line testing of semiconductor wafers | Electricity | 1 | Expired |
| US9110127B2 | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor | Physics | 0 | Active |
| US10429522B1 | Electrostatic hole trapping radiation detectors | Electricity | 0 | Active |
| US10338237B2 | Inductive radiation detector | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.