Vertically-constructed, temperature-sensing resistors and methods of making the same
US10431357B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Nov 13, 2017 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Nov 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.