Inventor · Santa Clara, CA, US

Andrew Strachan

27Patents
5h-index
27Co-inventors
69Inventor score

Filing activity: Mar 30, 1990 → Jun 10, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7180140B1 PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in and method for designing and manufacturing such device Electricity 27 Expired
US8445353B1 Method for integrating MIM capacitor and thin film resistor in modular two layer metal process and corresponding device Electricity 11 Active
US7067879B1 Integration of trench power transistors into a 1.5 μm BCD process Electricity 7 Expired
US8686502B2 Schottky diode integrated into LDMOS Electricity 5 Active
US5045495A Forming twin wells in semiconductor devices Emerging Cross-Sectional Technologies 5 Expired
US9905428B2 Split-gate lateral extended drain MOS transistor structure and process Electricity 5 Active
US6548839B1 LDMOS transistor structure using a drain ring with a checkerboard pattern for improved hot carrier reliability Electricity 5 Expired
US9773777B2 Low dynamic resistance low capacitance diodes Electricity 2 Active
US7510944B1 Method of forming a MIM capacitor Electricity 2 Active
US6798641B1 Low cost, high density diffusion diode-capacitor Electricity 2 Expired
US10431357B2 Vertically-constructed, temperature-sensing resistors and methods of making the same Electricity 1 Active
US8664076B2 Method of forming a robust, modular MIS (metal-insulator-semiconductor) capacitor with improved capacitance density Electricity 1 Active
US7071513B1 Layout optimization of integrated trench VDMOS arrays Electricity 1 Expired
US7425741B1 EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusion Electricity 1 Expired
US11152505B2 Drain extended transistor Electricity 1 Active
US8541863B2 Data retention in a single poly EPROM cell Electricity 0 Active
US9831135B2 Method of forming a biCMOS semiconductor chip that increases the betas of the bipolar transistors Electricity 0 Active
US10937574B2 Vertically-constructed, temperature-sensing resistors and methods of making the same Electricity 0 Active
US6646320B1 Method of forming contact to poly-filled trench isolation region Electricity 0 Expired
US10153269B2 Low dynamic resistance low capacitance diodes Electricity 0 Active
US10748818B2 Dynamic biasing to mitigate electrical stress in integrated resistors Electricity 0 Active
US7192853B1 Method of improving the breakdown voltage of a diffused semiconductor junction Electricity 0 Expired
US7560348B2 Method for designing and manufacturing a PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in Electricity 0 Active
US9595480B2 Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors Electricity 0 Active
US10714594B2 Transistors with oxide liner in drift region Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.