Patent · US Active

Method of planarizing a semiconductor wafer and semiconductor wafer

US10431471B2 · kind B2 · utility

0Cited by

7References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Carsten von Koblinski · Velden am Wörther See, AT
Markus Ottowitz · Arnoldstein, AT
Andreas Riegler · Tenneck, AT

Key dates

Filing date	Apr 25, 2016
Grant date	Oct 1, 2019
Priority date	—
Expiry date	Apr 25, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3083
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide a method of planarizing a semiconductor wafer, wherein the method comprises providing a semiconductor wafer comprising a surface; and forming a mask layer on the surface of the semiconductor wafer, wherein a thickness of the mask layer is smaller in thinning areas, which are to be thinned for planarizing, than in areas which are not to be thinned for planarizing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.