Method for forming a cavity and a component having a cavity

US10431474B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Simon Armbruster · Wannweil, DE
• Benjamin Steuer · Waldenbuch, DE
• Stefan Pinter · Reutlingen, DE
• Dietmar Haberer · Reutlingen, DE
• Jochen Tomaschko · Herrenberg, DE

Key dates

• Filing date: May 29, 2015
• Grant date: Oct 1, 2019
• Expiry date: Jun 18, 2036

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/013
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the <111> directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.