Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride

US10431698B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Jens Peter Konrath · Villach, AT
• Ronny Kern · Finkenstein, AT
• Stefan Krivec · Villach, AT
• Ulrich Schmid · Wien, AT
• Laura Stoeber · Wien, AT

Key dates

• Filing date: Jan 2, 2019
• Grant date: Oct 1, 2019
• Expiry date: Jan 2, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.