Patent · US Active

Memory cell and methods thereof

US10438645B2 · kind B2 · utility

17Cited by

6References

14Claims

0Family size

Assignee

Ferroelectric Memory GmbH · DE

Inventors

Stefan Müller · Wetzlar, DE
Marko Noack · Dresden, DE
Johannes Ocker · Dresden, DE
Rolf Jähne · Dresden, DE

Key dates

Filing date	Oct 27, 2017
Grant date	Oct 8, 2019
Priority date	—
Expiry date	Oct 27, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D48/36
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

According to various embodiments, a memory cell may include: a field-effect transistor structure comprising a channel region and a gate structure disposed at the channel region, the gate structure comprising a gate electrode structure and a gate isolation structure disposed between the gate electrode structure and the channel region; and a memory structure comprising a first electrode structure, a second electrode structure, and at least one remanent-polarizable layer disposed between the first electrode structure and the second electrode structure; wherein the first electrode structure of the memory structure is electrically conductively connected to the gate electrode structure of the field-effect transistor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.