Ferroelectric Memory GmbH
50Patents
50Active
50Granted
58Portfolio score
Filing activity: Oct 27, 2017 → Dec 5, 2023
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11335391B1 | Memory cell arrangement and method thereof | Physics | 20 | Active |
| US10460788B2 | Memory cell and methods thereof | Electricity | 20 | Active |
| US10438645B2 | Memory cell and methods thereof | Electricity | 17 | Active |
| US10622051B2 | Memory cell and methods thereof | Electricity | 12 | Active |
| US10650892B2 | Ternary memory cell and ternary memory cell arrangement | Physics | 11 | Active |
| US11195589B1 | Memory cell arrangement and methods thereof | Physics | 10 | Active |
| US11189331B1 | Memory cell arrangement and methods thereof | Electricity | 10 | Active |
| US11081159B1 | Memory cell arrangement and methods thereof | Electricity | 10 | Active |
| US10978129B1 | Memory cell, memory cell arrangement and methods thereof | Electricity | 9 | Active |
| US11443792B1 | Memory cell, memory cell arrangement, and methods thereof | Electricity | 9 | Active |
| US11158361B2 | Memory cell arrangement and methods thereof | Electricity | 8 | Active |
| US11289145B2 | Memory cell, memory cell arrangement, and methods thereof | Electricity | 8 | Active |
| US11508426B1 | Memory device, memory cell arrangement, and methods thereof | Physics | 8 | Active |
| US11101291B2 | Memory cell arrangement and methods thereof | Electricity | 8 | Active |
| US11475935B1 | Memory cell arrangement and methods thereof | Physics | 8 | Active |
| US11393518B1 | Memory cell arrangement and methods thereof | Physics | 7 | Active |
| US11309793B2 | Latch-type charge pump | Electricity | 6 | Active |
| US11309792B2 | Voltage converter circuit | Electricity | 6 | Active |
| US11309034B2 | Memory cell arrangement and methods thereof | Physics | 6 | Active |
| US11049541B2 | Memory cell arrangement and methods thereof | Physics | 6 | Active |
| US11387254B2 | Memory cell and methods thereof | Electricity | 4 | Active |
| US11508428B2 | Voltage supply circuit, memory cell arrangement, transistor arrangement, and methods thereof | Physics | 3 | Active |
| US11682461B2 | Memory cell arrangement and methods thereof | Physics | 3 | Active |
| US11594271B2 | Memory cell driver, memory cell arrangement, and methods thereof | Physics | 3 | Active |
| US11605435B2 | Threshold switch structure and memory cell arrangement | Physics | 3 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.