Patent · US Active

Method for determining a memory window of a resistive random access memory

US10438660B2 · kind B2 · utility

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6References

8Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Giuseppe Piccolboni · Verona, IT
Gabriel Molas · Grenoble, FR

Key dates

Filing date	Jan 2, 2018
Grant date	Oct 8, 2019
Priority date	—
Expiry date	Jan 2, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0054
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for determining a memory window of at least one resistive random access memory cell, the resistive random access memory cell including a high resistance state and a low resistance state, the passage of the resistive random access memory from an initial state among the high resistance state or the low resistance state to another state then the return to the initial state forming a cycle, the method including: measuring the values of the resistances of the high resistance and low resistance states at a given cycle j, j being an integer; determining the memory window to use during the n cycles following the given cycle j, n being an integer, the memory window being calculated by taking into account at least the resistances of the high resistance and low resistance states at the cycle j.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.