Inventor · Grenoble, FR

Gabriel Molas

29Patents

3h-index

33Co-inventors

59Inventor score

Filing activity: Jan 22, 2009 → Dec 18, 2024

Most-cited inventions

Patent	Title	Area	Cited by	Status
US10388376B2	Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory	Physics	20	Active
US9053976B2	Structure and production process of a microelectronic 3D memory device of flash NAND type	Electricity	10	Active
US9722177B2	Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal	Electricity	5	Active
US8252702B2	Fabrication of a memory with two self-aligned independent gates	Electricity	2	Active
US9748477B2	Method of forming a conductive filament in a living resistive memory device including a pre-forming step to form a localised path of oxygen vacancies from an interface layer	Electricity	2	Active
US9633725B2	Method for determining electrical parameters used to programme a resistive random access memory	Physics	2	Active
US10002664B2	Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes	Physics	2	Active
US9431607B2	Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal	Physics	2	Active
US7968398B2	Method for producing a floating gate with an alternation of lines of first and second materials	Electricity	1	Active
US12033698B2	Method for resetting an array of resistive memory cells	Physics	1	Active
US11393876B2	Three dimensional resistive random access memory and method enabling such a memory to be obtained	Electricity	1	Active
US12414485B2	Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell	Electricity	0	Active
US10803940B2	Method for programming a resistive random access memory	Physics	0	Active
US11763884B2	Energy recovery in filamentary resistive memories	Physics	0	Active
US12406724B2	Resistive memory with selector, equipped with a write capacitor, and associated writing method	Electricity	0	Active
US12349609B2	Low forming voltage OxRAM memory cell, and associated method of manufacture	Electricity	0	Active
US12224007B2	Method for determining a manufacturing parameter of a resistive random access memory cell	Electricity	0	Active
US10475509B2	Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory	Physics	0	Active
US8685819B2	Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines	Electricity	0	Active
US12165706B2	Method for resetting an array of resistive memory cells	Physics	0	Active
US8710574B2	Dual gate electronic memory cell and device with dual gate electronic memory cells	Electricity	0	Active
US12087360B2	Method for programming an array of resistive memory cells	Physics	0	Active
US10748917B2	Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device	Electricity	0	Active
US11145812B2	Resistive random access memory device	Physics	0	Active
US10438660B2	Method for determining a memory window of a resistive random access memory	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.