Image sensor
US10438981B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Feb 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.