Integrated-circuit devices including different types of memory cells and methods of forming the same
US10438998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Dec 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices may include a substrate including a flash memory region and a variable resistance memory region, a flash memory cell transistor including a cell gate electrode that overlaps the flash memory region of the substrate, a variable resistance element that overlaps the variable resistance memory region of the substrate, and a select transistor including a select source/drain region that is disposed in the variable resistance memory region of the substrate. The select source/drain region may be electrically connected to the variable resistance element. The substrate may include an upper surface facing the cell gate electrode and the variable resistance element, and the upper surface of the substrate may continuously extend from the flash memory region to the variable resistance memory region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.