Junhee Lim
18Patents
3h-index
31Co-inventors
52Inventor score
Filing activity: Oct 22, 2014 → Apr 18, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10790358B2 | Three-dimensional semiconductor memory devices | Electricity | 4 | Active |
| US10651195B2 | Three-dimensional semiconductor memory device | Electricity | 4 | Active |
| US10438998B2 | Integrated-circuit devices including different types of memory cells and methods of forming the same | Physics | 4 | Active |
| US10373653B2 | Semiconductor device having first memory section and second memory section stacked vertically on each other | Electricity | 3 | Active |
| US9595315B2 | Semiconductor memory device compensating difference of bitline interconnection resistance | Physics | 3 | Active |
| US10861902B2 | Semiconductor device having magnetic tunnel junction pattern | Physics | 3 | Active |
| US10403719B2 | Three-dimensional semiconductor memory devices | Electricity | 2 | Active |
| US10971238B2 | Three-dimensional semiconductor memory devices and methods of operating the same | Physics | 1 | Active |
| US10443885B2 | Air handler having fan module and separation partition | Emerging Cross-Sectional Technologies | 1 | Active |
| US11049847B2 | Semiconductor device for preventing defects between bit lines and channels | Electricity | 1 | Active |
| US12347778B2 | Semiconductor device and electronic system including the same | Electricity | 0 | Active |
| US10978480B2 | Three-dimensional semiconductor memory device | Electricity | 0 | Active |
| US11361798B2 | Semiconductor device | Electricity | 0 | Active |
| US11575009B2 | Semiconductor device having high voltage transistors | Electricity | 0 | Active |
| US10818689B2 | Three-dimensional semiconductor memory device and method of fabricating the same | Electricity | 0 | Active |
| US12278165B2 | Semiconductor storage devices and data storage systems including the same | Electricity | 0 | Active |
| US11430515B2 | Resistive memory device controlling bitline voltage | Physics | 0 | Active |
| US11557631B2 | Semiconductor device having first memory section and second memory section | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.