Semiconductor device and method of manufacturing semiconductor device
US10439060B2 · kind B2 · utility
2Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | May 30, 2018 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | May 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
Abstract
A semiconductor device includes an n-type silicon carbide epitaxial layer on a front surface of an n+-type silicon carbide substrate. A first p+-type base region is provided in the n-type silicon carbide epitaxial layer and a breakdown voltage structure region is provided in an outer periphery of an active region through which a main current flows. A distance between the first p+-type base region and a front surface of the n+-type silicon carbide substrate is smaller than a distance between the breakdown voltage structure region and the front surface of the n+-type silicon carbide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.