Multistage set procedure for phase change memory
US10446229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Feb 12, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucleation of a crystalline state of the PM. The control logic can increase the temperature to a second temperature for a second period of time. The second temperature is configured to promote crystal growth within the PM. The nucleation and growth of the crystal set the PM to the crystalline state. The multistage ramping up of the temperature can improve the efficiency of the set process relative to traditional approaches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.