Patent · US Active

Process for etching a SiN-based layer

US10446408B2 · kind B2 · utility

1Cited by

2References

18Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Nicolas Posseme · Grenoble, FR

Key dates

Filing date	Apr 24, 2018
Grant date	Oct 15, 2019
Priority date	—
Expiry date	Apr 24, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A microelectronic method for etching a layer containing silicon nitride is provided, including the following successive steps: modifying the layer containing silicon nitride (SiN) so as to form at least one modified zone, the modifying including at least one implantation of ions made from hydrogen (H) in the layer containing SiN; and removing the at least one modified zone, the removing of the at least one modified zone including at least one step of etching of the at least one modified zone using a chemistry including at least: at least one compound chosen from the fluorocarbon compounds (CxFz) and the hydrofluorocarbon compounds (CxHyFz), and at least one compound chosen from SiwCl(2w+2) and SiwF(2w+2).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.