Image sensor with phase difference detection pixel
US10446599B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2017 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Sep 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes a pixel array having a plurality of pixels arranged therein. At least any one of the plurality of pixels include: a photoelectric conversion unit including first and second photoelectric conversion elements; a first sub-lens formed over the first photoelectric conversion element, and having a vertex out of a central axis of the first photoelectric conversion element; a second sub-lens formed over the second photoelectric conversion element, and having a vertex out of a central axis of the second photoelectric conversion element; and a microlens formed over the photoelectric conversion element so as to overlap the first and second sub-lenses. The first sub-lens is symmetrical with the second sub-lens, based on a boundary surface between the first and second photoelectric conversion elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.